BC212BG

BC212BG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-BC212BG
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: pdf
  • Stock: 5063
  • Description: BC212BG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Current Rating -100mA
Frequency 280MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC212
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 280MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 280MHz
Collector Emitter Saturation Voltage -250mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Continuous Collector Current -100mA
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 350mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260

BC212BG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 2mA 5V.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 280MHz in the part.During maximum operation, collector current can be as low as 100mA volts.

BC212BG Features


the DC current gain for this device is 60 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 280MHz

BC212BG Applications


There are a lot of ON Semiconductor BC212BG applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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