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BAW56LT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BAW56LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 2908
- Description: BAW56LT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Max Repetitive Reverse Voltage (Vrrm) | 70V |
| Peak Non-Repetitive Surge Current | 4A |
| Diode Configuration | 1 Pair Common Anode |
| Max Forward Surge Current (Ifsm) | 500mA |
| Recovery Time | 6 ns |
| Height | 940μm |
| Length | 2.9mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2001 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.70 |
| Subcategory | Rectifier Diodes |
| Voltage - Rated DC | 70V |
| Max Power Dissipation | 225mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 200mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BAW56L |
| Pin Count | 3 |
| Number of Elements | 2 |
| Element Configuration | Common Anode |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 2.5μA @ 70V |
| Power Dissipation | 300mW |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
| Forward Current | 200mA |
| Max Reverse Leakage Current | 2.4μA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 4A |
| Output Current-Max | 0.1A |
| Halogen Free | Halogen Free |
| Current - Average Rectified (Io) | 200mA DC |
| Forward Voltage | 1.25V |
| Max Reverse Voltage (DC) | 70V |
| Average Rectified Current | 200mA |
| Reverse Recovery Time | 6 ns |
| Peak Reverse Current | 2.5μA |
BAW56LT1G Overview
This device will operate when the forward voltage is set to 1.25V.0.1A is its maximum output voltage.Array should be a rule to monArrayor the surge current and not allow Array to exceed 4A.In the case of 200mA forward voltage, the device will operate.In this case, the part can provide a current of 200mA.Array is powered by a reverse voltage peak of 2.5μA.When reverse biased, its maximum reverse leakage current is 2.4μA, which is the current coming from that semiconductor device.This electronic or electrical device creates 300mW of heat (energy loss) as a derivative of its primary action.In this electronic or electrical device, the maximum amount of 225mW heat is generated (energy is wasted).
BAW56LT1G Features
1.25V forward voltage
a maximum output voltage of 0.1A
a peak voltage of 2.5μA
a reverse voltage peak of 2.5μA
BAW56LT1G Applications
There are a lot of ON Semiconductor BAW56LT1G applications of rectifier diode array.
- General Rectification
- Rectifiers in switch mode power supplies (SMPS)
- Rectifiers for UBS
- Crowbar applications
- Free wheeling diode in low voltage converters
- Battery chargers
- Rectifier for drives applications
