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BAV70LT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BAV70LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 587
- Description: BAV70LT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.70 |
| Capacitance | 1.5pF |
| Subcategory | Rectifier Diodes |
| Voltage - Rated DC | 70V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 200mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BAV70L |
| Pin Count | 3 |
| Number of Elements | 2 |
| Element Configuration | Common Cathode |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 2.5μA @ 70V |
| Power Dissipation | 300mW |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
| Forward Current | 200mA |
| Max Reverse Leakage Current | 2.5μA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 500mA |
| Output Current-Max | 0.1A |
| Halogen Free | Halogen Free |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 200mA DC |
| Forward Voltage | 1.25V |
| Max Reverse Voltage (DC) | 70V |
| Average Rectified Current | 200mA |
| Reverse Recovery Time | 6 ns |
| Peak Reverse Current | 2.5μA |
| Max Repetitive Reverse Voltage (Vrrm) | 70V |
| Peak Non-Repetitive Surge Current | 500mA |
| Diode Configuration | 1 Pair Common Cathode |
| Max Forward Surge Current (Ifsm) | 500mA |
| Recovery Time | 6 ns |
| Height | 1.016mm |
| Length | 3.0226mm |
| Width | 1.397mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BAV70LT1G Overview
A forward voltage of 1.25V will enable the device to operate.0.1A is its maximum output voltage.A surge current should be monitored and should not exceed 500mA.In operation, this device will be set to 200mA volts forward.Using the part, you can draw a current of 200mA.There are approximately 1.5pF farads of capacitance in this device.The reverse voltage peak of this device is 2.5μA.A semiconductor device's maximum reverse leakage current is 2.5μA, which is the current created by its reverse bias.In addition to its primary function, this device creates "300mW" of heat (energy loss).
BAV70LT1G Features
1.25V forward voltage
a maximum output voltage of 0.1A
1.5pF farads
a peak voltage of 2.5μA
a reverse voltage peak of 2.5μA
BAV70LT1G Applications
There are a lot of ON Semiconductor BAV70LT1G applications of rectifier diode array.
- Rectifiers in switch mode power supplies (SMPS)
- General Rectification
- Free wheeling diode in low voltage converters
- Crowbar applications
- Rectifier for drives applications
- Rectifiers for UBS
- Battery chargers
