BAT6207L4E6327XT

BAT6207L4E6327XT datasheet pdf and Diodes - RF product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-BAT6207L4E6327XT
  • Package: 4-XFDFN
  • Datasheet: pdf
  • Stock: 8236
  • Description: BAT6207L4E6327XT datasheet pdf and Diodes - RF product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Package / Case 4-XFDFN
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BAT62-07
Power Dissipation-Max 100mW
Diode Type Schottky - 2 Independent
Current - Max 20mA
Capacitance @ Vr, F 0.6pF @ 0V 1MHz
Voltage - Peak Reverse (Max) 40V
RoHS Status ROHS3 Compliant

BAT6207L4E6327XT Overview


A maximum current of 20mA is required to operate this device.The maximum reverse voltage of this device is in accordance with its applicable specifications.

BAT6207L4E6327XT Features


from a maximum current of 20mA volts

BAT6207L4E6327XT Applications


There are a lot of Infineon Technologies BAT6207L4E6327XT applications of RF diodes.

  • Low diode capacitance
  • Low-loss, high-power limiters
  • RF attenuators
  • Diode ring mixer
  • RF detector
  • Sampling circuits
  • Phase detection
  • RF attenuators and switches
  • RF voltage doubler
  • Radar systems for industrial use

In Stock

Please send RFQ , we will respond immediately.