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BAT54CWT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BAT54CWT1G
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 1477
- Description: BAT54CWT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
| Weight | 30mg |
| Diode Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.70 |
| Subcategory | Rectifier Diodes |
| Voltage - Rated DC | 30V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 200mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BAT54CW |
| Pin Count | 3 |
| Number of Elements | 2 |
| Element Configuration | Common Cathode |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 2μA @ 25V |
| Power Dissipation | 200mW |
| Voltage - Forward (Vf) (Max) @ If | 800mV @ 100mA |
| Forward Current | 200mA |
| Max Reverse Leakage Current | 2μA |
| Operating Temperature - Junction | -55°C~125°C |
| Max Surge Current | 600mA |
| Output Current-Max | 0.2A |
| Current - Average Rectified (Io) | 200mA DC |
| Forward Voltage | 800mV |
| Max Reverse Voltage (DC) | 30V |
| Average Rectified Current | 200mA |
| Reverse Recovery Time | 5 ns |
| Peak Reverse Current | 2μA |
| Max Repetitive Reverse Voltage (Vrrm) | 30V |
| Peak Non-Repetitive Surge Current | 600mA |
| Diode Configuration | 1 Pair Common Cathode |
| Max Forward Surge Current (Ifsm) | 600mA |
| Recovery Time | 5 ns |
| Height | 900μm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BAT54CWT1G Overview
This device will operate when the forward voltage is set to 800mV.The maximum output voltage is 0.2A.Surge currents should be monitored and prevented from exceeding 600mA.Devices that have a forward voltage of 200mA will operate.There can be a current drawn from this part of 200mA.Powered by reverse voltage, this device has a peak voltage of 2μA.A semiconductor device's maximum reverse leakage current is 2μA, which is the current created by its reverse bias.By virtue of its primary function, this electronic or electrical device generates 200mW kcal of heat (energy loss).
BAT54CWT1G Features
800mV forward voltage
a maximum output voltage of 0.2A
a peak voltage of 2μA
a reverse voltage peak of 2μA
BAT54CWT1G Applications
There are a lot of ON Semiconductor BAT54CWT1G applications of rectifier diode array.
- Battery chargers
- Crowbar applications
- Rectifiers for UBS
- General Rectification
- Rectifier for drives applications
- Rectifiers in switch mode power supplies (SMPS)
- Free wheeling diode in low voltage converters
