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BAS21SLT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BAS21SLT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 7896
- Description: BAS21SLT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.70 |
| Capacitance | 5pF |
| Subcategory | Rectifier Diodes |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 225mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BAS21S |
| Pin Count | 3 |
| Number of Elements | 2 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100nA @ 200V |
| Power Dissipation | 300mW |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 200mA |
| Forward Current | 225mA |
| Max Reverse Leakage Current | 1μA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 625mA |
| Output Current-Max | 0.225A |
| Halogen Free | Halogen Free |
| Current - Average Rectified (Io) | 225mA DC |
| Forward Voltage | 1.25V |
| Max Reverse Voltage (DC) | 250V |
| Average Rectified Current | 225mA |
| Reverse Recovery Time | 50 ns |
| Peak Reverse Current | 100μA |
| Max Repetitive Reverse Voltage (Vrrm) | 250V |
| Peak Non-Repetitive Surge Current | 625mA |
| Diode Configuration | 1 Pair Series Connection |
| Max Forward Surge Current (Ifsm) | 625mA |
| Recovery Time | 50 ns |
| Height | 1.01mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BAS21SLT1G Overview
In the case of 1.25V forward voltage, the device will operate.Array is capable of supporting a maximum output voltage of 0.225A.Monarrayoring the surge current and preventing array from exceeding 625mA should be the rule.The device operates when the forward voltage is set to 225mA.Array is possible to draw current from the part of 225mA.Capacitance in this device is approximately 5pF farads.In devices such as this one, reverse voltage peak is set at 100μA.Its maximal reverse leakage current is 1μA, which is the current from that semiconductor device when the device is reverse biased.Due to its primary action, this electronic or electrical device produces 300mW of heat (energy loss).
BAS21SLT1G Features
1.25V forward voltage
a maximum output voltage of 0.225A
5pF farads
a peak voltage of 100μA
a reverse voltage peak of 100μA
BAS21SLT1G Applications
There are a lot of ON Semiconductor BAS21SLT1G applications of rectifier diode array.
- Battery chargers
- Rectifiers for UBS
- Crowbar applications
- General Rectification
- Rectifier for drives applications
- Free wheeling diode in low voltage converters
- Rectifiers in switch mode power supplies (SMPS)
