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ContactBAS16DXV6T1G
BAS16DXV6T1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-BAS16DXV6T1G
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 2323
- Description: BAS16DXV6T1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Diode Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.70 |
| Capacitance | 2pF |
| Subcategory | Other Diodes |
| Voltage - Rated DC | 75V |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 200mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BAS16DXV6 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Power Dissipation-Max | 0.5W |
| Element Configuration | Dual |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 1μA @ 75V |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
| Forward Current | 200mA |
| Max Reverse Leakage Current | 1μA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 500mA |
| Output Current-Max | 0.2A |
| Halogen Free | Halogen Free |
| Current - Average Rectified (Io) | 200mA DC |
| Forward Voltage | 1.25V |
| Max Reverse Voltage (DC) | 75V |
| Average Rectified Current | 200mA |
| Reverse Recovery Time | 6 ns |
| Peak Reverse Current | 1μA |
| Max Repetitive Reverse Voltage (Vrrm) | 75V |
| Peak Non-Repetitive Surge Current | 500mA |
| Diode Configuration | 2 Independent |
| Max Forward Surge Current (Ifsm) | 500mA |
| Recovery Time | 6 ns |
| Height | 600μm |
| Length | 1.7mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
BAS16DXV6T1G Overview
The device operates when the forward voltage is set to 1.25V.A maximum output voltage of 0.2A is supported by array.We should be monitoring the surge current and keeping it below 500mA.The device operates when the forward voltage is set to 200mA.Parts can be powered by currents of 200mA.There are approximately 2pF farads of capacitance in this device.Array is powered by a reverse voltage peak of 1μA.The maximum reverse leakage current from this semiconductor is 1μA, which corresponds to the reverse leakage current from that device when reverse biased.
BAS16DXV6T1G Features
1.25V forward voltage
a maximum output voltage of 0.2A
2pF farads
a peak voltage of 1μA
a reverse voltage peak of 1μA
BAS16DXV6T1G Applications
There are a lot of ON Semiconductor BAS16DXV6T1G applications of rectifier diode array.
- Battery chargers
- Rectifier for drives applications
- Crowbar applications
- Free wheeling diode in low voltage converters
- General Rectification
- Rectifiers for UBS
- Rectifiers in switch mode power supplies (SMPS)
