BAR 50-02V E6327

BAR 50-02V E6327 datasheet pdf and Diodes - RF product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-BAR 50-02V E6327
  • Package: SC-79, SOD-523
  • Datasheet: pdf
  • Stock: 378
  • Description: BAR 50-02V E6327 datasheet pdf and Diodes - RF product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
ECCN Code EAR99
Subcategory PIN Diodes
Base Part Number BAR50
Power Dissipation-Max 250mW
Diode Type PIN - Single
Current - Max 100mA
Capacitance @ Vr, F 0.4pF @ 5V 1MHz
Voltage - Peak Reverse (Max) 50V
Breakdown Voltage-Min 50V
Reverse Test Voltage 1V
Diode Capacitance-Nom 0.24pF
Resistance @ If, F 4.5Ohm @ 10mA 100MHz
Minority Carrier Lifetime-Nom 1.1 µs
RoHS Status RoHS Compliant
Package / Case SC-79, SOD-523
Surface Mount YES
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)

BAR 50-02V E6327 Overview


This device is designed to operate from the maximal current of 100mA.The maximum peak reverse voltage for this device is 50V, according to the applicable device specifications.The device may occasionally operate at the lowest breakdown voltage possible, which is 50V.A valid conversion result requires a reverse test voltage within 1V.

BAR 50-02V E6327 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 50V

BAR 50-02V E6327 Applications


There are a lot of Infineon Technologies BAR 50-02V E6327 applications of RF diodes.

  • Low loss band-switching in VHF television tuners
  • Modulators
  • Receiver protectors
  • General-purpose Voltage Controlled Attenuators for high linearity applications
  • UHF mixer
  • RF detector
  • Series diode for mobile communication transmit/receive switch
  • Band switching
  • Compensators
  • Low-loss, high-power limiters

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