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ContactBAP65LX,315
BAP65LX,315 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi
- Manufacturer: NXP Semiconductors
- NO: 568-BAP65LX,315
- Package: SOD-882
- Datasheet:
- Stock: 4666
- Description: BAP65LX,315 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Package / Case | SOD-882 |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.10.00.70 |
| Subcategory | PIN Diodes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BAP65 |
| Pin Count | 2 |
| JESD-30 Code | R-PDSO-N2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 135mW |
| Diode Type | PIN - Single |
| Application | ATTENUATOR; SWITCHING |
| Current - Max | 100mA |
| Capacitance @ Vr, F | 0.37pF @ 20V 1MHz |
| Voltage - Peak Reverse (Max) | 30V |
| Breakdown Voltage-Min | 30V |
| Reverse Test Voltage | 20V |
| Diode Capacitance-Nom | 0.37pF |
| Resistance @ If, F | 350mOhm @ 100mA 100MHz |
| Diode Capacitance-Max | 0.85pF |
| Minority Carrier Lifetime-Nom | 0.18 µs |
| Diode Res Test Current | 5mA |
| Diode Res Test Frequency | 100MHz |
| Diode Forward Resistance-Max | 0.9Ohm |
BAP65LX,315 Overview
The device is designed to operate from a maximal current of 100mA volts.RF diode operates at a maximum reverse voltage of 30V in accordance wRF diodeh the device specifications.The device may run at its lowest breakdown voltage of 30V occasionally.Diode is required that the reverse test voltage be wDiodehin 20V for a valid conversion result.
BAP65LX,315 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 30V
BAP65LX,315 Applications
There are a lot of NXP USA Inc. BAP65LX,315 applications of RF diodes.
- General-purpose Voltage Controlled Attenuators for high linearity applications
- Low diode capacitance
- Diode ring mixer
- RF attenuators
- RF attenuators and switches
- Telematic systems
- Clamping circuits
- Smart metering
- Ultra high-speed switching
- Radar systems for industrial use
