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ContactBAP64LX,315
BAP64LX,315 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi
- Manufacturer: NXP Semiconductors
- NO: 568-BAP64LX,315
- Package: SOD-882
- Datasheet:
- Stock: 3860
- Description: BAP64LX,315 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Package / Case | SOD-882 |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.10.00.70 |
| Subcategory | PIN Diodes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BAP64L |
| Pin Count | 2 |
| JESD-30 Code | R-PDSO-N2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 150mW |
| Diode Type | PIN - Single |
| Application | ATTENUATOR; SWITCHING |
| Current - Max | 100mA |
| Capacitance @ Vr, F | 0.3pF @ 20V 1MHz |
| Voltage - Peak Reverse (Max) | 60V |
| Breakdown Voltage-Min | 60V |
| Reverse Test Voltage | 20V |
| Frequency Band | S B |
| Diode Capacitance-Nom | 0.3pF |
| Resistance @ If, F | 1.5Ohm @ 100mA 100MHz |
| Diode Capacitance-Max | 0.3pF |
| Minority Carrier Lifetime-Nom | 1 µs |
| Diode Res Test Current | 0.5mA |
| Diode Res Test Frequency | 100MHz |
| RoHS Status | ROHS3 Compliant |
BAP64LX,315 Overview
From 100mA, this device will operate.This device operates at a maximum reverse voltage of 60V in accordance with its applicable specifications.Sometimes, this device might run at its lowest breakdown voltage.A valid conversion result requires a reverse test voltage within 20V.
BAP64LX,315 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 60V
BAP64LX,315 Applications
There are a lot of NXP USA Inc. BAP64LX,315 applications of RF diodes.
- General-purpose Voltage Controlled Attenuators for high linearity applications
- Car radio
- Compensators
- RF detector
- Sensor interfaces of security systems
- Diode ring mixer
- RF attenuators
- Series diode for mobile communication transmit/receive switch
- Ultra high-speed switching
- Wearables
