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ContactBAP51-03,115
BAP51-03,115 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi
- Manufacturer: NXP Semiconductors
- NO: 568-BAP51-03,115
- Package: SC-76, SOD-323
- Datasheet:
- Stock: 4325
- Description: BAP51-03,115 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BAP51 |
| Pin Count | 2 |
| JESD-30 Code | R-PDSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 500mW |
| Diode Type | PIN - Single |
| Current - Max | 50mA |
| Capacitance @ Vr, F | 0.35pF @ 5V 1MHz |
| Voltage - Peak Reverse (Max) | 50V |
| Breakdown Voltage-Min | 60V |
| Reverse Test Voltage | 1V |
| Diode Capacitance-Nom | 0.55pF |
| Resistance @ If, F | 2.5Ohm @ 10mA 100MHz |
| Diode Capacitance-Max | 0.55pF |
| Minority Carrier Lifetime-Nom | 0.55 µs |
| Diode Res Test Current | 0.5mA |
| Diode Res Test Frequency | 100MHz |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Package / Case | SC-76, SOD-323 |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.10.00.70 |
| Subcategory | PIN Diodes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
BAP51-03,115 Overview
Designed to operate from a maximum of 50mA volts, this device operates from a maximum current of 50mA volts.RF diode operates at a maximum reverse voltage of 50V in accordance wRF diodeh the device specifications.The device may occasionally run at its lowest breakdown voltage.Diode is required that the reverse test voltage be wDiodehin 1V for a valid conversion result.
BAP51-03,115 Features
from a maximum current of 50mA volts
at its lowest breakdown voltage of 60V
BAP51-03,115 Applications
There are a lot of NXP USA Inc. BAP51-03,115 applications of RF diodes.
- Set top boxes
- Receiver protectors
- Clamping circuits
- Bandswitch for TV tuners
- (SAT) TV
- Sampling circuits
- Radar systems and modules
- RF voltage doubler
- Low diode forward resistance
- Diode ring mixer
