BAP50-03,135

BAP50-03,135 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi


  • Manufacturer: NXP Semiconductors
  • NO: 568-BAP50-03,135
  • Package: SC-76, SOD-323
  • Datasheet: pdf
  • Stock: 8436
  • Description: BAP50-03,135 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Breakdown Voltage-Min 50V
Reverse Test Voltage 1V
Source Url Status Check Date 2013-06-14 00:00:00
Diode Capacitance-Nom 0.55pF
Resistance @ If, F 5Ohm @ 10mA 100MHz
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 40Ohm
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Package / Case SC-76, SOD-323
Surface Mount YES
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Subcategory PIN Diodes
Base Part Number BAP50
Pin Count 2
Power Dissipation-Max 500mW
Diode Type PIN - Single
Current - Max 50mA
Capacitance @ Vr, F 0.35pF @ 5V 1MHz
Voltage - Peak Reverse (Max) 50V

BAP50-03,135 Overview


The device is designed to operate from a maximal current of 50mA volts.In accordance with the applicable device specifications, this device operates at a maximum peak reverse voltage of 50V.RF diode is possible that this device may occasionally operate at RF diodes lowest breakdown voltage of 50V.A conversion result is valid if the reverse test voltage is within the range of 1V.

BAP50-03,135 Features


from a maximum current of 50mA volts
at its lowest breakdown voltage of 50V

BAP50-03,135 Applications


There are a lot of NXP USA Inc. BAP50-03,135 applications of RF diodes.

  • RF voltage doubler
  • Clamping circuits
  • Laptop and desktop PCs
  • Broadband system applications i.e. WCDMA, CATV, etc.
  • Low diode capacitance
  • (SAT) TV
  • Compensators
  • Receiver protectors
  • Surface-mount band-switching circuits
  • Radar systems for industrial use

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