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ContactBAP1321-04,215
BAP1321-04,215 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi
- Manufacturer: NXP Semiconductors
- NO: 568-BAP1321-04,215
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 613
- Description: BAP1321-04,215 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.10.00.70 |
| Subcategory | PIN Diodes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BAP1321-04 |
| Pin Count | 3 |
| JESD-30 Code | R-PDSO-G3 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
| Power Dissipation-Max | 250mW |
| Diode Type | PIN - 1 Pair Series Connection |
| Application | ATTENUATOR; SWITCHING |
| Current - Max | 100mA |
| JEDEC-95 Code | TO-236AB |
| Capacitance @ Vr, F | 0.325pF @ 20V 1MHz |
| Voltage - Peak Reverse (Max) | 60V |
| Breakdown Voltage-Min | 60V |
| Frequency Band | S B |
| Diode Capacitance-Nom | 0.42pF |
| Resistance @ If, F | 1.3Ohm @ 100mA 100MHz |
| Diode Capacitance-Max | 0.45pF |
| Minority Carrier Lifetime-Nom | 0.5 μs |
| Diode Res Test Current | 0.5mA |
| Diode Res Test Frequency | 100MHz |
| RoHS Status | ROHS3 Compliant |
BAP1321-04,215 Overview
The maximum current of this device is 100mA.Device specifications specify a maximum reverse voltage of 60V for this device.Occasionally, this device may run at its lowest possible breakdown voltage of 60V.
BAP1321-04,215 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 60V
BAP1321-04,215 Applications
There are a lot of NXP USA Inc. BAP1321-04,215 applications of RF diodes.
- Modulators
- General-purpose Voltage Controlled Attenuators for high linearity applications
- RF voltage doubler
- Low-loss, high-power limiters
- Low diode capacitance
- Low loss band-switching in VHF television tuners
- Telematic systems
- Set top boxes
- Band switching
- Phase detection
