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ContactBAP1321-03,115
BAP1321-03,115 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi
- Manufacturer: NXP Semiconductors
- NO: 568-BAP1321-03,115
- Package: SC-76, SOD-323
- Datasheet:
- Stock: 1818
- Description: BAP1321-03,115 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Current - Max | 100mA |
| Capacitance @ Vr, F | 0.32pF @ 20V 1MHz |
| Voltage - Peak Reverse (Max) | 60V |
| Breakdown Voltage-Min | 60V |
| Frequency Band | S B |
| Diode Capacitance-Nom | 0.4pF |
| Resistance @ If, F | 1.3Ohm @ 100mA 100MHz |
| Diode Capacitance-Max | 0.45pF |
| Minority Carrier Lifetime-Nom | 0.5 μs |
| Diode Res Test Current | 0.5mA |
| Diode Res Test Frequency | 100MHz |
| RoHS Status | ROHS3 Compliant |
| Package / Case | SC-76, SOD-323 |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.10.00.70 |
| Subcategory | PIN Diodes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BAP1321 |
| Pin Count | 2 |
| JESD-30 Code | R-PDSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 500mW |
| Diode Type | PIN - Single |
| Application | ATTENUATOR; SWITCHING |
BAP1321-03,115 Overview
RF diode operates at 100mA volts, which is the maximal current RF diode can handle.Based on its applicable specifications, this device operates at 60V peak reverse voltage.RF diode is possible that this device may occasionally operate at RF diodes lowest breakdown voltage of 60V.
BAP1321-03,115 Features
from a maximum current of 100mA volts
at its lowest breakdown voltage of 60V
BAP1321-03,115 Applications
There are a lot of NXP USA Inc. BAP1321-03,115 applications of RF diodes.
- RF attenuators
- Surface-mount band-switching circuits
- Phase detection
- Low diode forward resistance
- Compensators
- Clamping circuits
- Receiver protectors
- RF attenuators and switches
- General-purpose Voltage Controlled Attenuators for high linearity applications
- Modulators
