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ContactAUIRFN8459TR
AUIRFN8459TR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-AUIRFN8459TR
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 6834
- Description: AUIRFN8459TR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 11 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 4.8mOhm |
| Additional Feature | ULTRA LOW RESISTANCE |
| Max Power Dissipation | 50W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.9m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Rise Time | 55ns |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time (Typ) | 42 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 50A |
| Gate to Source Voltage (Vgs) | 20V |
| DS Breakdown Voltage-Min | 40V |
| Avalanche Energy Rating (Eas) | 66 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
AUIRFN8459TR Description
Designed for automotive applications, this HEXFET power MOSFET uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the design include a 175 ??C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these functions makes the product an extremely efficient and reliable device for automotive and a variety of other applications.
AUIRFN8459TR Features
?¤ Advanced Process Technology
?¤ Dual N-Channel MOSFET
?¤ Ultra Low On-Resistance
?¤ 175??C Operating Temperature
?¤ Fast Switching
?¤ Repetitive Avalanche Allowed up to Tjmax
?¤ Lead-Free, RoHS Compliant
?¤ Automotive Qualified *
AUIRFN8459TR Applications
?¤ 12V Automotive Systems
?¤ Brushed DC Motor
?¤ Braking
?¤ Transmission
