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AUIRF7342QTR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-AUIRF7342QTR
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9347
- Description: AUIRF7342QTR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | Automotive, AEC-Q101, HEXFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 14 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 105m Ω @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 690pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time (Typ) | 22 ns |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | 3.4A |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.105Ohm |
| Drain to Source Breakdown Voltage | -55V |
| Avalanche Energy Rating (Eas) | 114 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
AUIRF7342QTR Description
This cellular design of HEXFET Power MOSFET is designed for automotive applications and uses the latest technology to achieve a low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with extremely efficient and reliable devices for automotive and a variety of other applications.
AUIRF7342QTR Features
?¤ Advanced Planar Technology
?¤ Low On-Resistance
?¤ Logic Level Gate Drive
?¤ Dual P Channel MOSFET
?¤ Dynamic dv/dt Rating
?¤ 150??C Operating Temperature
?¤ Fast Switching
?¤ Fully Avalanche Rated
?¤ Lead-Free, RoHS Compliant
?¤ Automotive Qualified *
AUIRF7342QTR Applications
The device provides designers with extremely efficient and reliable devices for automotive and a variety of other applications.
