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AUIRF7341QTR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-AUIRF7341QTR
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 4748
- Description: AUIRF7341QTR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | Automotive, AEC-Q101, HEXFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2.4W |
| Terminal Form | GULL WING |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.4W |
| Turn On Delay Time | 9.2 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 5.1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Rise Time | 7.7ns |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time (Typ) | 12.5 ns |
| Turn-Off Delay Time | 31 ns |
| Continuous Drain Current (ID) | 5.1A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.05Ohm |
| Drain to Source Breakdown Voltage | 55V |
| Avalanche Energy Rating (Eas) | 140 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
AUIRF7341QTR Description
These HEXFET power MOSFET are designed for automotive applications and are packaged in dual SO-8 packages that use the latest technology to achieve extremely low on-resistance per silicon area. Other features of these automotive certified HEXFET power MOSFET include 175C junction operating temperature, fast switching speed and improved repeated avalanche ratings. The combination of these advantages makes the design an extremely efficient and reliable device for automotive and a variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capabilities, making it an ideal choice for a variety of power applications. This dual surface mount SO-8 can greatly reduce circuit board space and can also be used on magnetic tapes and reels.
AUIRF7341QTR Features
· Advanced Planar Technology
· Ultra Low On-Resistance
· Logic Level Gate Drive
· Dual N Channel MOSFET
· Surface Mount
· Available in Tape & Reel
· 175°C Operating Temperature
· Lead-Free, RoHS Compliant
· Automotive Qualified *
AUIRF7341QTR Applications
The combination of these advantages makes the design an extremely efficient and reliable device for automotive and a variety of other applications.
