ATF-551M4-TR1

Trans JFET N-CH 5V 100mA GaAs pHEMT 4-Pin Mini-PAK T/R


  • Manufacturer: Broadcom
  • NO: 107-ATF-551M4-TR1
  • Package: 0505 (1412 Metric)
  • Datasheet: pdf
  • Stock: 7757
  • Description: Trans JFET N-CH 5V 100mA GaAs pHEMT 4-Pin Mini-PAK T/R(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Package / Case 0505 (1412 Metric)
Number of Pins 4
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Gold (Au)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Subcategory FET RF Small Signal
Voltage - Rated DC 5V
Max Power Dissipation 270mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Frequency 2GHz
Base Part Number ATF-551M4
Case Code (Metric) 1412
Case Code (Imperial) 0505
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power Dissipation 270mW
Current - Test 10mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 5V
Polarity/Channel Type N-CHANNEL
Transistor Type pHEMT FET
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 1V
Gain 17.5dB
Drain Current-Max (Abs) (ID) 0.1A
DS Breakdown Voltage-Min 5V
Power - Output 14.6dBm
FET Technology HIGH ELECTRON MOBILITY
Noise Figure 0.5dB
Voltage - Test 2.7V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead

In Stock

Please send RFQ , we will respond immediately.