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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Number of Pins | 2 |
| Operating Temperature | 200°C TJ |
| Packaging | Tray |
| Published | 2008 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Max Power Dissipation | 600mW |
| Frequency | 9GHz |
| Power Dissipation | 600mW |
| Gain Bandwidth Product | 9 GHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 80mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 35mA 8V |
| Collector Emitter Breakdown Voltage | 12V |
| Gain | 10.5dB ~ 14dB |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 1.5V |
| Continuous Collector Current | 80mA |
| Noise Figure (dB Typ @ f) | 1.9dB ~ 3dB @ 2GHz ~ 4GHz |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
Avago’s AT-42000 is a general-purpose NPN bipolar transistor chip that offers excellent high-frequency performance. The 4-micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20-emitter finger interdigitated geometry yields a medium-sized transistor with impedances that are easy to match for low noise and medium power applications.
This device is designed for use in low noise, wideband amplifiers, mixers, and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50W up to 1 GHz, makes this device easy to use as a low-noise amplifier.
High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
High Gain at 1 dB
Compression:
15.0 dB Typical G1 dB at 2.0 GHz
10.0 dB Typical G1 dB at 4.0 GHz
Low Noise Figure: 1.9 dB
Typical NFO at 2.0 GHz
High Gain-Bandwidth
Product: 9.0 GHz Typical fT
Please send RFQ , we will respond immediately.