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ContactAPTMC120TAM33CTPAG
MOSFET 6N-CH 1200V 78A SP6-P
- Manufacturer: Microsemi
- NO: 523-APTMC120TAM33CTPAG
- Package: SP6
- Datasheet:
- Stock: 1606
- Description: MOSFET 6N-CH 1200V 78A SP6-P(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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prices and inventories about the part.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 22 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Chassis Mount |
| Mounting Type | Chassis Mount |
| Package / Case | SP6 |
| Number of Pins | 6 |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 23 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 370W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| JESD-30 Code | R-XUFM-X23 |
| Number of Elements | 6 |
| Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| FET Type | 6 N-Channel (3-Phase Bridge) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 33m Ω @ 60A, 20V |
| Vgs(th) (Max) @ Id | 2.2V @ 3mA (Typ) |
| Input Capacitance (Ciss) (Max) @ Vds | 2850pF @ 1000V |
| Current - Continuous Drain (Id) @ 25°C | 78A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 148nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V 1.2kV |
| Continuous Drain Current (ID) | 78A |
| Drain-source On Resistance-Max | 0.033Ohm |
| Pulsed Drain Current-Max (IDM) | 155A |
| DS Breakdown Voltage-Min | 1200V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Silicon Carbide (SiC) |
| RoHS Status | RoHS Compliant |
