APTMC120AM16CD3AG

MOSFET 2N-CH 1200V 131A D3


  • Manufacturer: Microsemi
  • NO: 523-APTMC120AM16CD3AG
  • Package: D-3 Module
  • Datasheet: pdf
  • Stock: 1921
  • Description: MOSFET 2N-CH 1200V 131A D3(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Continuous Drain Current (ID) 131A
FET Feature Silicon Carbide (SiC)
RoHS Status RoHS Compliant
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D-3 Module
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 625W
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 20m Ω @ 100A, 20V
Vgs(th) (Max) @ Id 2.2V @ 5mA (Typ)
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 131A Tc
Gate Charge (Qg) (Max) @ Vgs 246nC @ 20V
Rise Time 20ns
Drain to Source Voltage (Vdss) 1200V 1.2kV

In Stock

Please send RFQ , we will respond immediately.