APTM20DHM16TG

MOSFET 2N-CH 200V 104A SP4


  • Manufacturer: Microsemi
  • NO: 523-APTM20DHM16TG
  • Package: SP4
  • Datasheet: pdf
  • Stock: 451
  • Description: MOSFET 2N-CH 200V 104A SP4(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

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Purchase & Inquiry

Transport

User guide

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Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SP4
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
JESD-609 Code e1
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 390W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 14
Qualification Status Not Qualified
Number of Elements 2
Configuration PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Power - Max 390W
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 52A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 7220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Drain to Source Voltage (Vdss) 200V
Continuous Drain Current (ID) 104A
Drain-source On Resistance-Max 0.019Ohm
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 3000 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.