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ContactAPTM20DHM10G
MOSFET 2N-CH 200V 175A SP6
- Manufacturer: Microsemi
- NO: 523-APTM20DHM10G
- Package: SP6
- Datasheet:
- Stock: 5841
- Description: MOSFET 2N-CH 200V 175A SP6(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SP6 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Published | 2016 |
| JESD-609 Code | e1 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE |
| Max Power Dissipation | 694W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-XUFM-X8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 694W |
| Case Connection | ISOLATED |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 12m Ω @ 87.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 13700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 224nC @ 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Continuous Drain Current (ID) | 175A |
| Gate to Source Voltage (Vgs) | 30V |
| Pulsed Drain Current-Max (IDM) | 700A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | RoHS Compliant |
