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ContactAPTM100H45SCTG
MOSFET 4N-CH 1000V 18A SP4
- Manufacturer: Microsemi
- NO: 523-APTM100H45SCTG
- Package: SP4
- Datasheet:
- Stock: 4696
- Description: MOSFET 4N-CH 1000V 18A SP4(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 22 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 3 weeks ago) |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SP4 |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| Series | POWER MOS 7® |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 14 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | AVALANCHE RATED |
| Max Power Dissipation | 357W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 14 |
| Qualification Status | Not Qualified |
| Number of Elements | 4 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 357W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 10 ns |
| FET Type | 4 N-Channel (H-Bridge) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 540m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 4350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 154nC @ 10V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 1000V 1kV |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 121 ns |
| Continuous Drain Current (ID) | 18A |
| Gate to Source Voltage (Vgs) | 30V |
| Pulsed Drain Current-Max (IDM) | 72A |
| DS Breakdown Voltage-Min | 1000V |
| Avalanche Energy Rating (Eas) | 2500 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | RoHS Compliant |
