APTM100A23SCTG

Trans MOSFET N-CH 1KV 36A 20-Pin Case SP-4


  • Manufacturer: Microsemi
  • NO: 523-APTM100A23SCTG
  • Package: SP4
  • Datasheet: pdf
  • Stock: 8007
  • Description: Trans MOSFET N-CH 1KV 36A 20-Pin Case SP-4(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP4
Number of Pins 4
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1997
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 694W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X10
Qualification Status Not Qualified
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 694W
Case Connection ISOLATED
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 308nC @ 10V
Drain to Source Voltage (Vdss) 1000V 1kV
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 1000V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Silicon Carbide (SiC)
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.