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ContactAPTM100A18FTG
MOSFET 2N-CH 1000V 43A SP4
- Manufacturer: Microsemi
- NO: 523-APTM100A18FTG
- Package: SP4
- Datasheet:
- Stock: 3111
- Description: MOSFET 2N-CH 1000V 43A SP4(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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prices and inventories about the part.
Our sales will reply to
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are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 36 Weeks |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SP4 |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | AVALANCHE RATED |
| Max Power Dissipation | 780W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 12 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 780W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 18 ns |
| FET Type | 2 N-Channel (Half Bridge) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 210m Ω @ 21.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 10400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 372nC @ 10V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 1000V 1kV |
| Fall Time (Typ) | 40 ns |
| Turn-Off Delay Time | 155 ns |
| Continuous Drain Current (ID) | 43A |
| Gate to Source Voltage (Vgs) | 30V |
| DS Breakdown Voltage-Min | 1000V |
| Avalanche Energy Rating (Eas) | 3000 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Radiation Hardening | No |
