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ContactAPTM08TAM04PG
Trans MOSFET N-CH 75V 120A 21-Pin Case SP-6P
- Manufacturer: Microsemi
- NO: 523-APTM08TAM04PG
- Package: SP6
- Datasheet:
- Stock: 5707
- Description: Trans MOSFET N-CH 75V 120A 21-Pin Case SP-6P(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| FET Feature | Standard |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 36 Weeks |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SP6 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Bulk |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 21 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Additional Feature | AVALANCHE RATED |
| Max Power Dissipation | 138W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 21 |
| JESD-30 Code | R-XUFM-X21 |
| Number of Elements | 6 |
| Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 138W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 35 ns |
| FET Type | 6 N-Channel (3-Phase Bridge) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.5m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 4530pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 153nC @ 10V |
| Rise Time | 60ns |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 100 ns |
| Continuous Drain Current (ID) | 120A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.0045Ohm |
| Pulsed Drain Current-Max (IDM) | 250A |
| DS Breakdown Voltage-Min | 75V |
| Avalanche Energy Rating (Eas) | 1500 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
