APTC60HM70RT3G

MOSFET 4N-CH 600V 39A SP3F


  • Manufacturer: Microsemi
  • NO: 523-APTC60HM70RT3G
  • Package: SP3
  • Datasheet: pdf
  • Stock: 5336
  • Description: MOSFET 4N-CH 600V 39A SP3F(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

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Purchase & Inquiry

Transport

User guide

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Means of Payment

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RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 36 Weeks
Mount Screw
Package / Case SP3
Number of Pins 3
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1999
Series CoolMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 250W
Number of Elements 4
Power Dissipation 250W
Turn On Delay Time 21 ns
FET Type 4 N-Channel (H-Bridge) + Bridge Rectifier
Rds On (Max) @ Id, Vgs 70m Ω @ 39A, 10V
Vgs(th) (Max) @ Id 3.9V @ 2.7mA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 259nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 600V
Fall Time (Typ) 84 ns
Turn-Off Delay Time 283 ns
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.