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APT27ZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-APT27ZTR-G1
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 8037
- Description: APT27ZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92 |
| Weight | 453.59237mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Polarity | NPN |
| Element Configuration | Single |
| Power - Max | 800mW |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 100mA 10V |
| Current - Collector Cutoff (Max) | 10μA |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 40mA, 200mA |
| Collector Emitter Breakdown Voltage | 450V |
| Voltage - Collector Emitter Breakdown (Max) | 450V |
| Current - Collector (Ic) (Max) | 800mA |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 450V |
| Emitter Base Voltage (VEBO) | 9V |
| Continuous Collector Current | 800mA |
| RoHS Status | ROHS3 Compliant |
APT27ZTR-G1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 100mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.When VCE saturation is 500mV @ 40mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).A constant collector voltage of 800mA is necessary for high efficiency.An emitter's base voltage can be kept at 9V to gain high efficiency.Single BJT transistor can be broken down at a voltage of 450V volts.The product comes in the supplier device package of TO-92.Single BJT transistor shows a 450V maximal voltage - Collector EmSingle BJT transistorter Breakdown.The maximum collector current is 800mA volts.
APT27ZTR-G1 Features
the DC current gain for this device is 15 @ 100mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 40mA, 200mA
the emitter base voltage is kept at 9V
the supplier device package of TO-92
APT27ZTR-G1 Applications
There are a lot of Diodes Incorporated APT27ZTR-G1 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
