APT13005T-G1

APT13005T-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • NO: 233-APT13005T-G1
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 5584
  • Description: APT13005T-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 20 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 75W
Element Configuration Single
Power - Max 75W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 900mV
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A 5V
Vce Saturation (Max) @ Ib, Ic 900mV @ 1A, 4A
Collector Emitter Breakdown Voltage 450V
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 4A
Collector Emitter Saturation Voltage 900mV
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 10V
Emitter Base Voltage (VEBO) 9V
Height 16.1mm
Length 10.2mm
Width 4.5mm
RoHS Status ROHS3 Compliant

APT13005T-G1 Overview


DC current gain in this device equals 8 @ 2A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 900mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 900mV @ 1A, 4A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.Single BJT transistor comes in a supplier device package of TO-220AB.The device has a 450V maximal voltage - Collector Emitter Breakdown.In extreme cases, the collector current can be as low as 4A volts.

APT13005T-G1 Features


the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
the supplier device package of TO-220AB

APT13005T-G1 Applications


There are a lot of Diodes Incorporated APT13005T-G1 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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Please send RFQ , we will respond immediately.