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APT13005SU-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-APT13005SU-G1
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 7121
- Description: APT13005SU-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 5 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 2016 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 20W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 4MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 1V |
| Max Collector Current | 3.2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A 5V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 750mA, 3A |
| Collector Emitter Breakdown Voltage | 450V |
| Current - Collector (Ic) (Max) | 3.2A |
| Transition Frequency | 4MHz |
| Collector Emitter Saturation Voltage | 1V |
| Collector Base Voltage (VCBO) | 10V |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 11.2mm |
| Length | 8.2mm |
| Width | 2.9mm |
| RoHS Status | ROHS3 Compliant |
APT13005SU-G1 Overview
This device has a DC current gain of 8 @ 2A 5V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 750mA, 3A.With the emitter base voltage set at 9V, an efficient operation can be achieved.A transition frequency of 4MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 3.2A volts at Single BJT transistors maximum.
APT13005SU-G1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 750mA, 3A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
APT13005SU-G1 Applications
There are a lot of Diodes Incorporated APT13005SU-G1 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
