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APT13003NZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-APT13003NZTR-G1
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 9122
- Description: APT13003NZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2015 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | O-PBCY-W3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power - Max | 1W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 1A 2V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 250mA, 1A |
| Collector Emitter Breakdown Voltage | 900V |
| Transition Frequency | 4MHz |
| Max Breakdown Voltage | 900V |
| Frequency - Transition | 4MHz |
| Turn On Time-Max (ton) | 4500ns |
| RoHS Status | ROHS3 Compliant |
APT13003NZTR-G1 Overview
This device has a DC current gain of 5 @ 1A 2V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 250mA, 1A.The part has a transition frequency of 4MHz.Breakdown input voltage is 900V volts.Collector current can be as low as 1.5A volts at its maximum.
APT13003NZTR-G1 Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 400mV @ 250mA, 1A
a transition frequency of 4MHz
APT13003NZTR-G1 Applications
There are a lot of Diodes Incorporated APT13003NZTR-G1 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
