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APT13003LZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-APT13003LZTR-G1
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 830
- Description: APT13003LZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 300mA 10V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 40mA, 200mA |
| Collector Emitter Breakdown Voltage | 450V |
| Voltage - Collector Emitter Breakdown (Max) | 450V |
| Current - Collector (Ic) (Max) | 800mA |
| Collector Emitter Saturation Voltage | 500mV |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 4.7mm |
| Length | 4.7mm |
| Width | 3.7mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 15 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2017 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Element Configuration | Single |
| Power - Max | 800mW |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 500mV |
APT13003LZTR-G1 Overview
In this device, the DC current gain is 6 @ 300mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 40mA, 200mA.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Single BJT transistor comes in a supplier device package of TO-92.There is a 450V maximal voltage in the device due to collector-emitter breakdown.When collector current reaches its maximum, it can reach 800mA volts.
APT13003LZTR-G1 Features
the DC current gain for this device is 6 @ 300mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 40mA, 200mA
the emitter base voltage is kept at 9V
the supplier device package of TO-92
APT13003LZTR-G1 Applications
There are a lot of Diodes Incorporated APT13003LZTR-G1 applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
