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APT13003EZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi
- Manufacturer: Diodes Incorporated
- NO: 233-APT13003EZTR-G1
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 7656
- Description: APT13003EZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Supplier Device Package | TO-92 |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2017 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.1W |
| Element Configuration | Single |
| Power - Max | 1.1W |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 13 @ 500mA 2V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 250mA, 1A |
| Collector Emitter Breakdown Voltage | 465V |
| Voltage - Collector Emitter Breakdown (Max) | 465V |
| Current - Collector (Ic) (Max) | 1.5A |
| Collector Emitter Saturation Voltage | 400mV |
| Frequency - Transition | 4MHz |
| Collector Base Voltage (VCBO) | 10V |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 4.7mm |
| Length | 4.7mm |
| Width | 3.7mm |
| RoHS Status | ROHS3 Compliant |
APT13003EZTR-G1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 13 @ 500mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 250mA, 1A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Single BJT transistor comes in a supplier device package of TO-92.Detection of Collector Emitter Breakdown at 465V maximal voltage is present.Collector current can be as low as 1.5A volts at its maximum.
APT13003EZTR-G1 Features
the DC current gain for this device is 13 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
the supplier device package of TO-92
APT13003EZTR-G1 Applications
There are a lot of Diodes Incorporated APT13003EZTR-G1 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
