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AML2002 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-AML2002
- Package: TO-225AA, TO-126-3
- Datasheet:
- Stock: 1880
- Description: AML2002 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2012 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| Max Power Dissipation | 1.5W |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | ISOLATED |
| Power - Max | 1.5W |
| Lens Style | Flat |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 220mV |
| Max Collector Current | 700mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 35mA, 350mA |
| Collector Emitter Breakdown Voltage | 200V |
| Transition Frequency | 120MHz |
| Collector Emitter Saturation Voltage | 125mV |
| Collector Base Voltage (VCBO) | 220V |
| Emitter Base Voltage (VEBO) | 8V |
| hFE Min | 200 |
AML2002 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 125mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 220mV @ 35mA, 350mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 8V can result in a high level of efficiency.A transition frequency of 120MHz is present in the part.When collector current reaches its maximum, it can reach 700mA volts.
AML2002 Features
the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of 125mV
the vce saturation(Max) is 220mV @ 35mA, 350mA
the emitter base voltage is kept at 8V
a transition frequency of 120MHz
AML2002 Applications
There are a lot of ON Semiconductor AML2002 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
