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AFT21S230SR3
  • AFT21S230SR3

AFT21S230SR3

AFT21S230SR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi


  • Manufacturer: NXP Semiconductors
  • NO: 318-AFT21S230SR3
  • Package: NI-780S
  • Datasheet: pdf
  • Stock: 1618
  • Description: AFT21S230SR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Package / Case NI-780S
Packaging Tape & Reel (TR)
Published 2006
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 65V
HTS Code 8541.29.00.40
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 2.11GHz
Time@Peak Reflow Temperature-Max (s) 40
Operating Temperature (Max) 150°C
Configuration Single
Current - Test 1.5A
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 16.7dB
Power - Output 50W
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 161W
Voltage - Test 28V
RoHS Status ROHS3 Compliant

AFT21S230SR3 Description


These 50 W RF power LDMOS transistors are intended for use in cellular base station applications operating in the 2110 to 2170 MHz frequency range. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance. This product can be applied in a variety of circumstances and is meant for general use.



AFT21S230SR3 Features


  • Improved Class C Operation through Extended Negative Gate-Source Voltage Range

  • Incorporated into Digital Predistortion Error Correction Systems

  • Designed with Doherty Applications in Mind

  • R3 Suffix = 250 Units, 44 mm Tape Width, NI—780S—2L2L, NI—780S—2L4S thirteen-inch reel

  • R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel, NI—780S—2L. See page 17 for possibilities for R5 Tape and Reels.



AFT21S230SR3 Applications


Switching applications


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