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ContactAFT05MS006NT1
AFT05MS006NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi
- Manufacturer: NXP Semiconductors
- NO: 318-AFT05MS006NT1
- Package: PLD-1.5W
- Datasheet:
- Stock: 4529
- Description: AFT05MS006NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Package / Case | PLD-1.5W |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Voltage - Rated | 30V |
| HTS Code | 8541.29.00.75 |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 520MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Current - Test | 100mA |
| Transistor Type | LDMOS |
| Gain | 18.3dB |
| Power - Output | 6W |
| Voltage - Test | 7.5V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 10 Weeks |
AFT05MS006NT1 Description
AFT05MS006NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AFT05MS006NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT05MS006NT1 has the common source configuration.
AFT05MS006NT1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
AFT05MS006NT1 Applications
ISM applications
DC large signal applications
