A3T23H300W23SR6

A3T23H300W23SR6 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi

Manufacturer: NXP Semiconductors
NO: 318-A3T23H300W23SR6
Package: -
Datasheet:
Stock: 6094
Description: A3T23H300W23SR6 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time	10 Weeks
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
RoHS Status	ROHS3 Compliant

A3T23H300W23SR6 Description

For cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz, this 63 W asymmetrical Doherty RF power LDMOS transistor is created. This product can be applied in a variety of circumstances and is meant for general use.

A3T23H300W23SR6 Features

Doherty advanced high performance in-package
Created for high-bandwidth immediate applications
The ability to resist exceptionally high output VSWR and broadband working conditions. A larger negative gate-source voltage range for enhanced Class C performance.
Made for systems that correct for digital predistortion