6N139(F)

6N139(F) datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Toshiba Semiconductor and Storage stock available at Utmel


  • Manufacturer: Toshiba Semiconductor and Storage
  • NO: 4669-6N139(F)
  • Package: 8-DIP (0.300, 7.62mm)
  • Datasheet: pdf
  • Stock: 4813
  • Description: 6N139(F) datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Toshiba Semiconductor and Storage stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
Operating Temperature 0°C~70°C
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature UL RECOGNIZED, CMOS COMPATIBLE
Max Power Dissipation 100mW
Base Part Number 6N139
Voltage - Isolation 2500Vrms
Output Type Darlington with Base
Number of Elements 1
Configuration SINGLE
Power Dissipation 100mW
Output Current 60mA
Voltage - Forward (Vf) (Typ) 1.65V
Input Type DC
Optoelectronic Device Type LOGIC IC OUTPUT OPTOCOUPLER
Forward Current 20mA
Max Output Voltage 18V
Data Rate 300 kbps
Output Current per Channel 60mA
Rise Time 60μs
Fall Time (Typ) 25 μs
Max Collector Current 60mA
Reverse Breakdown Voltage 5V
Max Input Current 20mA
Current Transfer Ratio (Min) 500% @ 1.6mA
Turn On / Turn Off Time (Typ) 200ns, 1μs
Reverse Voltage (DC) 5V
Current Transfer Ratio 800 %
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Number of Pins 8

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