4N30

4N30 datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from ON Semiconductor stock available at Utmel


  • Manufacturer: ON Semiconductor
  • NO: 598-4N30
  • Package: 6-DIP (0.300, 7.62mm)
  • Datasheet: pdf
  • Stock: 919
  • Description: 4N30 datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from ON Semiconductor stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
JEDEC-95 Code TO-263
Current - Output / Channel 150mA
Voltage - Output (Max) 30V
Drain-source On Resistance-Max 0.29Ohm
Pulsed Drain Current-Max (IDM) 56A
DS Breakdown Voltage-Min 300V
Current - DC Forward (If) (Max) 80mA
Avalanche Energy Rating (Eas) 330 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Current Transfer Ratio (Min) 100% @ 10mA
Turn On / Turn Off Time (Typ) 5μs, 40μs (Max)
Vce Saturation (Max) 1V
Mounting Type Through Hole
Package / Case 6-DIP (0.300, 7.62mm)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~100°C
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 4N30
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Voltage - Isolation 5300Vrms
Output Type Darlington with Base
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Voltage - Forward (Vf) (Typ) 1.2V
Case Connection DRAIN
Input Type DC
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL

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