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30C02CH-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-30C02CH-TL-E
- Package: SC-96
- Datasheet:
- Stock: 6848
- Description: 30C02CH-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transition Frequency | 540MHz |
| Collector Emitter Saturation Voltage | 850mV |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 300 |
| Height | 900μm |
| Length | 2.9mm |
| Width | 1.6mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | SC-96 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 700mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 540MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 700mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 50mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 190mV @ 10mA, 200mA |
| Collector Emitter Breakdown Voltage | 30V |
| Current - Collector (Ic) (Max) | 700mA |
| Max Frequency | 540MHz |
30C02CH-TL-E Overview
In this device, the DC current gain is 300 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 850mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 190mV @ 10mA, 200mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A transition frequency of 540MHz is present in the part.In extreme cases, the collector current can be as low as 700mA volts.
30C02CH-TL-E Features
the DC current gain for this device is 300 @ 50mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 190mV @ 10mA, 200mA
the emitter base voltage is kept at 5V
a transition frequency of 540MHz
30C02CH-TL-E Applications
There are a lot of ON Semiconductor 30C02CH-TL-E applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
