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2STN2360 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-2STN2360
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 4773
- Description: 2STN2360 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.6W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 130MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | 2STN |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.6W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 130MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 150mA, 3A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 130MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 80 |
| Height | 1.8mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2STN2360 Overview
In this device, the DC current gain is 160 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 150mA, 3A.The emitter base voltage can be kept at 6V for high efficiency.130MHz is present in the transition frequency.Breakdown input voltage is 60V volts.Collector current can be as low as 3A volts at its maximum.
2STN2360 Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
2STN2360 Applications
There are a lot of STMicroelectronics 2STN2360 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
