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2STF2360 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-2STF2360
- Package: TO-243AA
- Datasheet:
- Stock: 5936
- Description: 2STF2360 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.4W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 130MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | 2STF23 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.4W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 130MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | -60V |
| Max Collector Current | -3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 150mA, 3A |
| Collector Emitter Breakdown Voltage | 60V |
| Current - Collector (Ic) (Max) | 3A |
| Transition Frequency | 130MHz |
| Collector Emitter Saturation Voltage | -300mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | -60V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 160 |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.6mm |
| Length | 4.6mm |
| Width | 2.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2STF2360 Overview
This device has a DC current gain of 160 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 3A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.As you can see, the part has a transition frequency of 130MHz.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below -3A volts.
2STF2360 Features
the DC current gain for this device is 160 @ 1A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 150mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz
2STF2360 Applications
There are a lot of STMicroelectronics 2STF2360 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
