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MOSFET (Metal Oxide) N-Channel Tube 12mOhm @ 30A, 10V ±20V 2300pF @ 10V 66nC @ 10V 30V TO-3P-3, SC-65-3
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SK3128(Q)
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 4324
- Description: MOSFET (Metal Oxide) N-Channel Tube 12mOhm @ 30A, 10V ±20V 2300pF @ 10V 66nC @ 10V 30V TO-3P-3, SC-65-3 (Kg)
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| Parameters | |
|---|---|
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 75 ns |
| Continuous Drain Current (ID) | 60A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 2.3nF |
| Drain to Source Resistance | 12mOhm |
| Rds On Max | 12 mΩ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Supplier Device Package | TO-3P(N) |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 150W Tc |
| Element Configuration | Single |
| Power Dissipation | 150W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
