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2SD2702TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SD2702TL
- Package: 3-SMD, Flat Lead
- Datasheet:
- Stock: 3391
- Description: 2SD2702TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Lead |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn/Cu) |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 800mW |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SD2702 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 800mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 400MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 12V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 25mA, 500mA |
| Collector Emitter Breakdown Voltage | 12V |
| Transition Frequency | 400MHz |
| Collector Emitter Saturation Voltage | 85mV |
| Max Breakdown Voltage | 12V |
| Collector Base Voltage (VCBO) | 15V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 270 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SD2702TL Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 85mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 200mV @ 25mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.As you can see, the part has a transition frequency of 400MHz.An input voltage of 12V volts is the breakdown voltage.A maximum collector current of 1.5A volts is possible.
2SD2702TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 85mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 400MHz
2SD2702TL Applications
There are a lot of ROHM Semiconductor 2SD2702TL applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
