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Contact2SD2537T100V
2SD2537T100V datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SD2537T100V
- Package: TO-243AA
- Datasheet:
- Stock: 3013
- Description: 2SD2537T100V datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 2W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1.2A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SD2537 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 1.2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 300nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 500mA |
| Collector Emitter Breakdown Voltage | 25V |
| Max Frequency | 100MHz |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 300mV |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 820 |
| Continuous Collector Current | 1.2A |
| Height | 1.4mm |
| Length | 4.7mm |
| Width | 2.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SD2537T100V Overview
In this device, the DC current gain is 820 @ 500mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages should be kept at 1.2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.2A).A transition frequency of 200MHz is present in the part.This device can take an input voltage of 25V volts before it breaks down.During maximum operation, collector current can be as low as 1.2A volts.
2SD2537T100V Features
the DC current gain for this device is 820 @ 500mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
a transition frequency of 200MHz
2SD2537T100V Applications
There are a lot of ROHM Semiconductor 2SD2537T100V applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
