2SD2444KT146R

2SD2444KT146R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-2SD2444KT146R
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 1282
  • Description: 2SD2444KT146R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 15V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SD2444
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 50mA 2V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 20mA, 400mA
Collector Emitter Breakdown Voltage 15V
Max Frequency 100MHz
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 15V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
hFE Min 180
Continuous Collector Current 1A
Height 1.1mm
Length 2.9mm
Width 1.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SD2444KT146R Overview


In this device, the DC current gain is 180 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Continuous collector voltages of 1A should be maintained to achieve high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As you can see, the part has a transition frequency of 200MHz.Single BJT transistor can be broken down at a voltage of 15V volts.The maximum collector current is 1A volts.

2SD2444KT146R Features


the DC current gain for this device is 180 @ 50mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 20mA, 400mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 200MHz

2SD2444KT146R Applications


There are a lot of ROHM Semiconductor 2SD2444KT146R applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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