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2SD2170T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SD2170T100
- Package: TO-243AA
- Datasheet:
- Stock: 3231
- Description: 2SD2170T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Additional Feature | BUILT-IN BIAS RESISTOR |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 90V |
| Max Power Dissipation | 2W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SD2170 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 80MHz |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 110V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A 2V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Collector Emitter Breakdown Voltage | 90V |
| Transition Frequency | 80MHz |
| Max Breakdown Voltage | 90V |
| Collector Base Voltage (VCBO) | 110V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 1000 |
| Continuous Collector Current | 2A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
2SD2170T100 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 1A 2V.When VCE saturation is 1.5V @ 1mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 2A in order to achieve high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 80MHz.A breakdown input voltage of 90V volts can be used.Collector current can be as low as 2A volts at its maximum.
2SD2170T100 Features
the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz
2SD2170T100 Applications
There are a lot of ROHM Semiconductor 2SD2170T100 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
