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Contact2SD2153T100V
2SD2153T100V datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SD2153T100V
- Package: TO-243AA
- Datasheet:
- Stock: 5291
- Description: 2SD2153T100V datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 2W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SD2153 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 110MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 500mA 6V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 20mA, 1A |
| Collector Emitter Breakdown Voltage | 25V |
| Max Frequency | 100MHz |
| Transition Frequency | 110MHz |
| Collector Emitter Saturation Voltage | 120mV |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 820 |
| Continuous Collector Current | 2A |
| VCEsat-Max | 0.5 V |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SD2153T100V Overview
In this device, the DC current gain is 820 @ 500mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 120mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 20mA, 1A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 110MHz.An input voltage of 25V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SD2153T100V Features
the DC current gain for this device is 820 @ 500mA 6V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 500mV @ 20mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 110MHz
2SD2153T100V Applications
There are a lot of ROHM Semiconductor 2SD2153T100V applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
