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2SD2142KT146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SD2142KT146
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5465
- Description: 2SD2142KT146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Contact Plating | Copper, Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 32V |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 300mA |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SD2142 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 200MHz |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 300mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100μA, 100mA |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 10V |
| hFE Min | 5000 |
| Continuous Collector Current | 300mA |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SD2142KT146 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 300mA to achieve high efficiency.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.200MHz is present in the transition frequency.Breakdown input voltage is 30V volts.Maximum collector currents can be below 300mA volts.
2SD2142KT146 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 200MHz
2SD2142KT146 Applications
There are a lot of ROHM Semiconductor 2SD2142KT146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
